| Autor: |
David Elata, J. Hsieh, Emmanuel P. Quevy, Roger T. Howe, J.-W. P. Chen, M. Ziaei-Moayyed |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. |
| Popis: |
This paper reports the use of internal electrostatic transduction to excite and detect the fifth bulk lateral mode of a 54µm outer-diameter, 12µm-wide, and 2.5µm-thick poly-silicon ring resonator at 1.95GHz, with a quality factor Q∼8000 in room air. The resonator is fabricated on a quartz substrate to reduce electrical feedthrough. The transducer is a sandwich of 500 nm of electrically floating polysilicon between layers of 50 nm of Si 3 N 4 , formed by refill of a trench etched in the structural polysilicon layer. This scalable double-gap internal electrostatic transducer is compatible with conventional optical lithography, since its critical dimensions are defined by deposition. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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