The Crystalline Quality of Epitaxial Si Layers Solution Grown on Polycrystalline Si Substrates

Autor:	B. Steiner, Martin Albrecht, Günter Wagner, A. Voigt, Th. Bergmann, Horst P. Strunk, W. Dorsch
Rok vydání:	1994
Předmět:	Thin layers Materials science business.industry Transmission electron microscopy Electron beam-induced current Optoelectronics Grain boundary Substrate (electronics) Crystallite Epitaxy business Layer (electronics)
Zdroj:	MRS Proceedings. 358
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-358-889
Popis:	We investigate the crystalline and electrical quality of thin layers epitaxially grown on polycrystalline substrates from metallic solution by the method of electron beam induced current, transmission electron microscopy and etching experiments. We observe a reduced recombination strength of dislocations and small angle grain boundaries, i.e. an improved electrical quality of the epitaxial layer compared to the substrate. The improved quality can be attributed (i) to an altered structure of grain boundaries and dislocations and (ii) to a reduced defect density in the epitaxial layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70f9f9891b1b84d559ac36579a2f1138 https://doi.org/10.1557/proc-358-889 Zobrazit plný text záznamu Full text from SpringerLink