Development of (λ ∼ 9.4μm) GaAs-Based Quantum Cascade Lasers Operating at the Room Temperature
| Autor: | Shubhada Adhi, Kamil Pierściński, Artur Trajnerowicz, Iwona Sankowska, Anna Szerling, Tomasz J. Ochalski, Guillaume Huyet, J. Kubacka-Traczyk, Emilia Pruszyńska-Karbownik, Michał Wasiak, A. Wójcik-Jedlińska, Kamil Kosiel, Maciej Bugajski, Piotr Karbownik, Dorota Pierścińska |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Waveguide (optics) law.invention Condensed Matter::Materials Science Operating temperature Cascade law Trench Optoelectronics Absorption (electromagnetic radiation) business Plasmon |
| Zdroj: | NATO Science for Peace and Security Series B: Physics and Biophysics ISBN: 9789400707689 |
| DOI: | 10.1007/978-94-007-0769-6_13 |
| Popis: | The development of (λ ∼ 9. 4 μ m) GaAs-based quantum cascade lasers (QCLs) operating at the room temperature is reported. The laser design followed an “anticrossed-diagonal” scheme of Page et al. [1]. The QCL GaAs∕Al0.45Ga0.55As heterostructures were grown by solid source (SS) MBE. The double trench lasers were fabricated using wet etching and Si3N4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. Optical and electrical properties of resulting devices are presented and discussed. |
| Databáze: | OpenAIRE |
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