A 0.5-W 850-nm Al x Ga 1-x As VECSEL with intracavity silicon carbide heatspreader

Autor:	David Burns, Richard H. Abram, John-Mark Hopkins, Stephane Calvez, C.W. Jeon, Martin D. Dawson, Jennifer E. Hastie
Rok vydání:	2003
Předmět:	Materials science business.industry Laser Semiconductor laser theory law.invention Gallium arsenide chemistry.chemical_compound Thermal conductivity chemistry law Silicon carbide Sapphire Optoelectronics Laser power scaling business Quantum well
Zdroj:	International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems.
ISSN:	0277-786X
DOI:	10.1117/12.517987
Popis:	High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70dfedfeb0281db52ebc5dedc44b5089 https://doi.org/10.1117/12.517987 Zobrazit plný text záznamu