Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals
| Autor: | Gilyong Chung, Balaji Raghothamachar, Michael Dudley, Ian Manning, Tuerxun Ailihumaer, Edward Sanchez |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Mechanics of Materials 0103 physical sciences General Materials Science Stage (hydrology) Dislocation Composite material 0210 nano-technology |
| Zdroj: | Materials Science Forum. 1004:44-50 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.1004.44 |
| Popis: | Dislocation behavior during the early stages of physical vapor transport (PVT) growth of 6-inch diameter 4H-SiC crystals has been investigated by synchrotron monochromatic beam X-ray topography (SMBXT) in conjunction with ray tracing simulations of dislocation images. Our studies reveal that most of the TSDs/TMDs are replicated into the newly grown layer while most TEDs are generated by either nucleation in pairs at the growth interface or by redirection of BPDs in the seed crystal. Most BPDs in the newly grown layer are of screw type with and this has been verified by comparison with ray tracing simulated images. TEDs with same and opposite sign of Burgers vector are found to be deflected on to the same basal plane by the overgrowth of macro-steps and they glide in the same and opposite directions respectively. TMDs deflected on to the basal plane by macro-steps get dissociated into c and a components, with the a segment undergoing glide to form V-shaped configurations. |
| Databáze: | OpenAIRE |
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