InP/InGaAsP lasers with broad area double heterostructure lasers as back‐face monitors

Autor:	B. P. Segner, S. G. Napholtz, Henryk Temkin, L. A. Koszi, E. J. Flynn, L. J. P. Ketelsen, G. J. Przybylek
Rok vydání:	1988
Předmět:	Photocurrent Materials science business.industry General Physics and Astronomy Heterojunction Semiconductor device Double heterostructure Laser law.invention Semiconductor laser theory law Optoelectronics Quantum efficiency business Sensitivity (electronics)
Zdroj:	Journal of Applied Physics. 64:3718-3721
ISSN:	1089-7550 0021-8979
Popis:	An InP/InGaAsP laser‐monitor hybrid structure which demonstrates the use of channeled‐substrate buried‐heterostructure lasers or broad area double heterostructure devices as ‘‘on‐board’’ edge‐detecting back‐face monitors is presented. Devices with and without antireflection facet coatings are used as monitors. A linear relationship between photocurrent and light output from the laser is observed for all monitor types. A photocurrent of 17.6 μA/mW is obtained with a facet‐coated, broad area monitor (at a monitor‐laser separation of ≊100 μm). The sensitivities obtained are in close agreement with those predicted assuming close to unity quantum efficiency in the junction region. Improved chip placement precision could permit a possible doubling of the monitor sensitivity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70d331ed24b481f584e0e04ebef8ce52 https://doi.org/10.1063/1.341415 Zobrazit plný text záznamu