A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET)
| Autor: | Philip G. Neudeck, Kevin M. Speer, Mehran Mehregany |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Thermal oxidation
Materials science business.industry Mechanical Engineering Transistor Oxide Condensed Matter Physics law.invention Threshold voltage chemistry.chemical_compound Semiconductor chemistry Mechanics of Materials law MOSFET Silicon carbide Electronic engineering Optoelectronics General Materials Science Field-effect transistor business |
| Zdroj: | Materials Science Forum. :777-780 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.717-720.777 |
| Popis: | The SiC vacuum field-effect transistor (VacFET) was first reported in 2010 as a diagnostic tool for characterizing the fundamental properties of the inverted SiC semiconductor surface without confounding issues associated with thermal oxidation. In this paper, interface state densities are extracted from measurements of threshold voltage instability on a SiC VacFET and a SiC MOSFET. It is shown that removing the oxide can reduce the interface state density by more than 70%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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