van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
| Autor: | Ning Wang, Weiguang Ye, Gen Long, Xiaolong Chen, Huanhuan Lu, Jiangxiazi Lin, Yingying Wu, Yu Han, Tianyi Han, Zefei Wu, Yuan Cai, Shuigang Xu, Lin Wang, Kin Ming Ho, Yuheng He |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Condensed matter physics Mechanical Engineering Superlattice Bioengineering Heterojunction General Chemistry Chemical vapor deposition Condensed Matter Physics Epitaxy symbols.namesake Transmission electron microscopy Topological insulator symbols Topological order General Materials Science van der Waals force |
| Zdroj: | Nano Letters. 15:2645-2651 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/acs.nanolett.5b00247 |
| Popis: | Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals interactions recently introduced new research fields, which revealed novel phenomena and provided promising applications for electronic, optical, and optoelectronic devices. In this study, we report the van der Waals epitaxial growth of high-quality atomically thin Bi2Se3 on single crystalline hexagonal boron nitride (h-BN) by chemical vapor deposition. Although the in-plane lattice mismatch between Bi2Se3 and h-BN is approximately 65%, our transmission electron microscopy analysis revealed that Bi2Se3 single crystals epitaxially grew on h-BN with two commensurate states; that is, the (1210) plane of Bi2Se3 was preferably parallel to the (1100) or (1210) plane of h-BN. In the case of the Bi2Se3 (2110) ∥ h-BN (1100) state, the Moire pattern wavelength in the Bi2Se3/h-BN superlattice can reach 5.47 nm. These naturally formed thin crystals facilitated the direct assembly of h-BN/Bi2Se3/h-BN sandwiched heterostructures withou... |
| Databáze: | OpenAIRE |
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