Ion mobility spectrometer with ion source based on laser-irradiated porous silicon

Autor:	Yu. A. Kuzishchin, A. S. Tsybin, Igor Martynov, G. E. Kotkovskii, V. A. Karavanskii, Alexander A. Chistyakov
Rok vydání:	2011
Předmět:	Materials science Physics and Astronomy (miscellaneous) Analytical chemistry Mass spectrometry Ion source law.invention Ion Secondary ion mass spectrometry Ion beam deposition Reflectron law Ionization Atomic physics Electron ionization
Zdroj:	Technical Physics Letters. 37:15-18
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785011010299
Popis:	A new ion source for ion mobility spectrometry based on UV laser action upon the surface of porous silicon, is described for the first time. It is found that the yield of TNT negative ions from this source is higher by an order of magnitude than in the case of multistep laser ionization of TNT-containing air mixture. It is established that factors important for the formation of negative ions in the case of continuous supply of analyt to the ionization region are (i) electron emission from the irradiated surface and (ii) subsequent ionmolecular reactions in the gas phase.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70ae22fa1691f8228da085a22334a021 https://doi.org/10.1134/s1063785011010299 Zobrazit plný text záznamu Plný text ve formátu PDF