Chemical activity of oxygen atoms in the magnetron sputter-deposited ZnO films
| Autor: | Hajime Shirai, Ikuo Watanabe, Aya Morita |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Annealing (metallurgy) Layer by layer Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Plasma Sputter deposition Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry Chemical engineering Sputtering law Cavity magnetron Materials Chemistry Crystallization |
| Zdroj: | Thin Solid Films. 519:6903-6909 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.11.055 |
| Popis: | The role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films was studied by alternating the deposition of a several-nanometer-thick ZnO layer and an O2/Ar mixed plasma exposure, i.e., a layer-by-layer (LbL) technique. The film crystallization was promoted by suppressing the oxygen vacancy and interstitial defects by adjusting the exposure conditions of the O2/Ar plasma. These findings suggest that the chemical potential of the oxygen atom influences the film crystallization and the electronic state. The diffusion and effusion of oxygen atoms at the growing surface have an effect similar to that of thermal annealing, promoted film crystallization and the creation and the annihilation of oxygen- and zinc-related defects. The role of oxygen atoms reaching at the growing film surface is discussed in terms of chemical annealing and a possible oxygen diffusion mechanism is proposed. |
| Databáze: | OpenAIRE |
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