Carrier screening effects in photoluminescence spectra of InGaAsP/InP multiple quantum well photovoltaic structures
| Autor: | C. L. Reynolds, O. Y. Raisky, Robert R. Alfano, W. B. Wang |
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| Rok vydání: | 2001 |
| Předmět: |
Photoluminescence
Materials science Physics and Astronomy (miscellaneous) Condensed Matter::Other business.industry Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Photodiode law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Optoelectronics Photoluminescence excitation business Excitation Quantum well |
| Zdroj: | Applied Physics Letters. 79:430-432 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Room temperature photoluminescence of p–i–n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities. Photoluminescence spectra show the effect of phase space filling in quantum wells with increasing excitation density. Bias dependence of photoluminescence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena.Room temperature photoluminescence of p–i–n InGaAsP/InP multiple quantum well heterostructures was investigated under different excitation intensities. Photoluminescence spectra show the effect of phase space filling in quantum wells with increasing excitation density. Bias dependence of photoluminescence clearly demonstrates field screening that occurs inside the undoped layer. Device simulation is used to explain the observed phenomena. |
| Databáze: | OpenAIRE |
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