Effects of low k film properties on electromigration performance

Autor: Haiying Fu, Yeow Kheng Lim, Alex See, Wei Lu, Fong Pin Fen, Liang Choo Hsia, Ling Soon Wong, Tae Jong Lee, J. Hander
Rok vydání: 2004
Předmět:
Zdroj: 2004 IEEE International Reliability Physics Symposium. Proceedings.
DOI: 10.1109/relphy.2004.1315419
Popis: This paper will compare the reliability results of first-generation Carbon-doped low k dielectric film with a second-generation Carbon-doped film, developed to have a high mechanical strength (HMS) and improved toughness. The first-generation low k film possessed acceptable unit process results, but was found to have marginal electromigration (EM) performance due to cohesive failures that resulted in Cu extrusion at the anode end of lines. By replacing the first-generation film with the HMS film, EM test median time to fail was increased by a factor of more than two. This improvement was found to be due to increased film fracture toughness.
Databáze: OpenAIRE