Floating-Body Diode—A Novel DRAM Device
| Autor: | Uygar E. Avci, David L. Kencke, Peter L. D. Chang |
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| Rok vydání: | 2012 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 33:161-163 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2177239 |
| Popis: | A novel 8F2 DRAM cell is introduced, consisting of two gates controlling a low-doped silicon-on-insulator channel and opposite-polarity source and drain. Simulation with models calibrated to experimental floating-body cell data confirms virtual thyristor memory operation and demonstrates 85°C retention time in excess of 10 ms in a scaled FinFET architecture. With unit cell area comparable to that of conventional DRAM, 1.6-V total operation range, 1-ns program time, and CMOS-compatible process, floating-body diode is a candidate for stand-alone or embedded memory applications at 15-nm node and beyond. |
| Databáze: | OpenAIRE |
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