Black silicon quality control by conditions of nickel-assisted etching of crystalline silicon surfaces in photovoltaic devices
Autor: | Arūnas Šetkus, Alfonsas Rėza, Marius Treideris, Mindaugas Kamarauskas, Viktorija Strazdienė, A. Mironas, Vladimir Agafonov |
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Rok vydání: | 2020 |
Předmět: |
inorganic chemicals
010302 applied physics Materials science business.industry Photovoltaic system Black silicon technology industry and agriculture General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Nickel chemistry.chemical_compound Quality (physics) chemistry Etching (microfabrication) 0103 physical sciences Optoelectronics Crystalline silicon 0210 nano-technology business |
Zdroj: | Lithuanian Journal of Physics. 60 |
ISSN: | 2424-3647 1648-8504 |
Popis: | Here we present a study of the nickel-assisted etching applied to form uniform black silicon layers on crystalline silicon substrates. We related the parameters used for technological process control (etchant, nickel thickness) to parameters of the obtained surface and explain the correlation using the etching model responsible for etching of the silicon covered by a thin nickel film. The increase in the thickness of the metal catalyst did not suppress the etching completely but allowed one to tune the roughness of the silicon surface. The rate of the electrochemical etching was additionally changed by adaptation of the proportion of components in the complex etchant. Depending on the intentionally selected conditions, the duration of the optimized process was from 3 to 10 min. The lowest optical reflection commonly accepted as the black silicon surface was obtained for the mixture with a low amount of the active etchant component. It was demonstrated that the method is acceptable to improve the characteristics of a photovoltaic cell. |
Databáze: | OpenAIRE |
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