Refined Structure and Properties of the Layered Mott Insulator BaCoS2

Autor: M. C. Gelabert, G. Jeffrey Snyder, Francis J. DiSalvo
Rok vydání: 1994
Předmět:
Zdroj: Journal of Solid State Chemistry. 113:355-361
ISSN: 0022-4596
DOI: 10.1006/jssc.1994.1380
Popis: BaCoS 2 is orthorhombic Cmma a = 6.4413(3) A, b = 6.4926(3) A, c = 8.9406(3) A, and is closely related to BaNiS 2 , which contains Ni-S layers separated by rock salt BaS sheets. Crystals were grown from the melt by slow cooling from 1050 to 950°C. The sulfur atoms in the Co-S layers have very anisotropic thermal displacement parameters, possibly indicating that these sulfurs are actually in a double well potential centered at a high symmetry position in the space group Cmma . BaCoS 2 is found to be a paramagnetic semiconductor (Mott insulator). The magnetic properties indicate that BaCoS 2 undergoes a transformation at 300 K, which is likely due to the onset of antiferromagnetic order.
Databáze: OpenAIRE