A stochastic resonator in a layered semiconductor device

Autor:	Yoseph Abebe, Mesfin Taye, Lemi Demeyu, Mulugeta Bekele, Tibebe Birhanu
Rok vydání:	2021
Předmět:	Materials science Stochastic resonance business.industry Doping Weak signal Statistical and Nonlinear Physics Semiconductor device Condensed Matter Physics Background noise Resonator Semiconductor Impurity diffusion Optoelectronics business
Zdroj:	International Journal of Modern Physics B. 35
ISSN:	1793-6578 0217-9792
Popis:	In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70854be7308453a1007dd034ad96c6e9 https://doi.org/10.1142/s0217979221502842 Zobrazit plný text záznamu