High microwave power source for 2.45 GHz wireless power charger applications

Autor:	Hsuan-Ling Kao, Hsien-Chin Chiu, Yung-Yu Chen, Chih-Sheng Yeh, Shao-Ping Shih
Rok vydání:	2013
Předmět:	Engineering Offset (computer science) business.industry Transistor dBm Electrical engineering dBc High-electron-mobility transistor law.invention Voltage-controlled oscillator law Phase noise Wireless Electrical and Electronic Engineering business
Zdroj:	International Journal of Electronics. 101:469-478
ISSN:	1362-3060 0020-7217
DOI:	10.1080/00207217.2013.785031
Popis:	The first report on a GaN-on-Si high electron-mobility transistor (HEMT) differential oscillator is presented. A high output power and low phase noise, 2.45 GHz cross-coupled pair voltage-controlled oscillator (VCO), using 0.35 μm GaN HEMT on silicon substrate technology is described. The VCO can be tuned, between 2.41 GHz and 2.53 GHz, and has a low phase noise, of –129.09 dBc/Hz, at 1 MHz offset. The output power of the VCO is 18.31 dBm at 2.53 GHz from a 15 V power supply, while the total die size was 0.87 mm2. The high output power and low phase noise are obtained for wireless power charger applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70807321f783a708c67f6d001432b4d6 https://doi.org/10.1080/00207217.2013.785031 Zobrazit plný text záznamu