Threshold switching in melanin

Autor: P. H. Sidles, C. H. Culp, D. E. Eckels
Rok vydání: 1975
Předmět:
Zdroj: Journal of Applied Physics. 46:3658-3660
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.322094
Popis: Threshold‐switching measurements of synthetic melanin confirm that this organic semiconductor switches to a low‐resistance state in low electric fields as reported by McGinness et al. Time‐dependent current‐vs‐voltage curves show that the time to traverse the negative‐differential‐resistance (NDR) segment is much slower than would be expected from electronic‐switching mechanisms. Double‐pulse measurements add to the evidence that thermal effects dominate electronic effects in melanin. A pseudomemory effect was found in melanin.
Databáze: OpenAIRE