Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles
| Autor: | Demid A. Kirilenko, D. A. Kurdyukov, E. Yu. Stovpiaga, Valery G. Golubev |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Surface diffusion Materials science Annealing (metallurgy) Dispersity Composite number 02 engineering and technology Mesoporous silica 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Chemical engineering 0103 physical sciences Molecule Nanorod 0210 nano-technology Mesoporous material |
| Zdroj: | Semiconductors. 54:782-787 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378262007012x |
| Popis: | Gallium-nitride nanorods with a diameter of 15–40 nm and length of 50–150 nm are synthesized in monodisperse spherical mesoporous silica particles (MSMSPs) by high-temperature annealing of the Ga2O3 precursor in ammonia. The template material (a-SiO2) is selectively removed by etching the composite MSMSP/GaN particles with HF to give individual GaN nanorods. It is shown that the size of the GaN nanorods substantially exceeds the pore size of the MSMSPs (diameter ~3 nm, length ~10 nm). A possible mechanism by which GaN nanorods are formed is proposed. Redistribution of the material within the composite MSMSP/GaN particles possibly occurs via the surface diffusion of gaseous molecules within mesopores and via the diffusion of Ga and N atoms in a-SiO2. |
| Databáze: | OpenAIRE |
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