Soft and hard breakdown: impact of annealing recovery on transistor performances
| Autor: | Gabriella Ghidini, Roberta Bottini, A. Garavaglia, D. Brazzelli, G. Giusto |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Transistor Oxide Thermal treatment equipment and supplies Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Soft breakdown chemistry.chemical_compound chemistry law Forensic engineering Optoelectronics Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 72:5-9 |
| ISSN: | 0167-9317 |
| Popis: | Aim of this work is to investigate the impact of soft breakdown on the main transistor parameters and the recovery of transistor leakage and performance after an annealing treatment. The correlation between soft (SBD) and hard breakdown (HBD) failures is also analysed considering the different impact of a thermal treatment. This treatment does not significantly improve the localised leakage current. On the other hand, the oxide recovery, measured by transistor parameters affected mainly by interface properties, is sufficient to cure the oxide reliability. In order to induce a new SBD event, the percolation path needs to inject the same amount of charge through the oxide, generating the same critical "bulk" and interface defect density of the virgin oxide. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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