Effective Injection of Spins from a Ferromagnetic Metal to the InSb Semiconductor
| Autor: | V. M. Tsvelikhovskaya, T. N. Pavlov, N. A. Kulesh, N. A. Viglin |
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| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Solid-state physics Spins business.industry Electron 01 natural sciences 010305 fluids & plasmas Condensed Matter::Materials Science Semiconductor Ferromagnetism 0103 physical sciences Degree of polarization Condensed Matter::Strongly Correlated Electrons 010306 general physics Spin (physics) business |
| Zdroj: | JETP Letters. 110:273-278 |
| ISSN: | 1090-6487 0021-3640 |
| DOI: | 10.1134/s0021364019160100 |
| Popis: | Conditions for the fabrication of lateral semiconductor spin devices with a high efficiency of spin injection have been revealed. Technological aspects of the formation of magnetic elements of a spin device, its electric contacts, and a thin MgO dielectric layer necessary for the efficient injection of spin-polarized electrons have been considered in detail. The degree of polarization of electrons for InSb about 25% has been obtained for the first time. |
| Databáze: | OpenAIRE |
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