| Autor: |
C. Rheinfelder, F. Beisswanger, U. Guttich |
| Rok vydání: |
1996 |
| Předmět: |
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| Zdroj: |
26th European Microwave Conference, 1996. |
| Popis: |
We report on design, technology, and experimental results of microstrip and coplanar Si-SiGe HBT Ks-band oscillators integrated monolithically on high resistivity silicon. The tuning range of the microstrip VCO was 100 MHz around 22.8 GHz and the output power reached-7 dBm with a conversion efficiency of 1%. The coplanar LC oscillators reached output powers of up to 1 dBm with a conversion efficiency of 358 at 28.1 GHz and 37.8 GHz. This exceeds the requirements for subharmonic injection locking of transit-time diodes like IMPATT oscillators. With the availability of such HBT oscillators extremely compact and low-cost FMCW radar circuits for use in industrial and traffic sensor systems will become possible in the ISM-bands 24 GHz (direct operation) and 76.5 GHz (by subharmonic injection locking). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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