Femtosecond relaxation of minority electrons in heavily carbon‐doped GaAs

Autor:	Richard C. Compton, Andrew C. Davidson, Dan E. Mars, Frank W. Wise, Jeffrey N. Miller
Rok vydání:	1994
Předmět:	Materials science Solid-state physics Condensed matter physics business.industry Scattering Relaxation (NMR) Doping General Physics and Astronomy Electron Photoexcitation Femtosecond Optoelectronics Condensed Matter::Strongly Correlated Electrons business Absorption (electromagnetic radiation)
Zdroj:	Journal of Applied Physics. 76:2255-2259
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.357644
Popis:	Relaxation of minority electrons in carbon‐doped GaAs with hole concentrations as high as 6×1019 cm−3 is measured with femtosecond optical techniques. The relaxation of photoexcited electrons depends strongly on the doping level above 1019 cm−3. The dependence of the transient absorption and reflectivity on the hole concentration indicates that electrons relax rapidly by electron‐hole scattering into low‐energy states which are available as a result of band‐gap renormalization and band tailing.
Databáze:	OpenAIRE
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