High permittivity gate insulators TiO/sub 2/ and ZrO/sub 2

Autor:	B. He, I. St. Omer, Noel Hoilien, Ryan C. Smith, Michael A. Gribelyuk, Stephen A. Campbell, Tso-Ping Ma, Wayne L. Gladfelter, Douglas A. Buchanan, Charles J. Taylor
Rok vydání:	2003
Předmět:	Permittivity Materials science Hydrogen Annealing (metallurgy) chemistry.chemical_element Chemical vapor deposition Microstructure Capacitance Silicate chemistry.chemical_compound Chemical engineering chemistry Electronic engineering Crystallite
Zdroj:	Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301).
Popis:	Polycrystalline films of TiO/sub 2/ and ZrO/sub 2/ have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO/sub 2/ and silicate formation in TiO/sub 2/.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7054863f1aac03fbe989d9a734ec63a0 https://doi.org/10.1109/ugim.1999.782817 Zobrazit plný text záznamu