Autor: |
B. He, I. St. Omer, Noel Hoilien, Ryan C. Smith, Michael A. Gribelyuk, Stephen A. Campbell, Tso-Ping Ma, Wayne L. Gladfelter, Douglas A. Buchanan, Charles J. Taylor |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301). |
Popis: |
Polycrystalline films of TiO/sub 2/ and ZrO/sub 2/ have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO/sub 2/ and silicate formation in TiO/sub 2/. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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