Non-recombination injection mode
| Autor: | R.A. Ayukhanov, R.M. Turmanova, E.S. Esenbaeva, A.Yu. Leyderman, A.K. Uteniyazov |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:248-254 |
| ISSN: | 1605-6582 1560-8034 |
| DOI: | 10.15407/spqeo24.03.248 |
| Popis: | A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure. |
| Databáze: | OpenAIRE |
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