Surface morphology evolution and underlying defects in homoepitaxial growth of GaAs (110)
Autor: | In Won Yeu, Hyun Cheol Koo, Gun Wu Ju, Young-hun Shin, Jung-Hae Choi, Yun Joong Lee, Hansung Kim, Hyung-jun Kim, Gyuseung Han |
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Rok vydání: | 2021 |
Předmět: |
Surface (mathematics)
Morphology (linguistics) Materials science Condensed matter physics Mechanical Engineering Relaxation (NMR) Metals and Alloys 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Layer thickness 0104 chemical sciences Mechanics of Materials Materials Chemistry Atomic ratio 0210 nano-technology Layer (electronics) |
Zdroj: | Journal of Alloys and Compounds. 874:159848 |
ISSN: | 0925-8388 |
Popis: | The evolution of the surface morphology and underlying pyramidal defects in homoepitaxial GaAs (110) layers was investigated with respect to the layer thickness up to 1 µm. Ga and As atoms coexisting in a one-to-one atomic ratio on the (110)-oriented GaAs surface exhibit different incorporation rates and adatom migration rates, giving rise to local As atomic disordering in the epitaxial layer. Accordingly, this disordering triggers distinctive shapes of three-dimensional surface islands composed of specific facets and underlying microtwins. Single triangular-shaped islands initially appear at an early stage of epitaxial growth. With increasing layer thickness, all of the single triangular islands suddenly become paired triangular islands by forming secondary single triangular islands nearby, like decalcomania. A further increase of the layer thickness induces a complete transformation into four-legged starfish shapes containing directional side edges. At this stage, the underlying pyramidal defects of the surface islands are filled with {111} microtwins. Surprisingly, the evolutions of island shapes and underlying twin formation are closely associated with the strain relaxation in the thick GaAs (110) layers, which is unexpected in any homoepitaxial system. We found that a higher growth temperature retards the shape evolution of surface islands, leading to suppression of compressive strain. |
Databáze: | OpenAIRE |
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