| Popis: |
In this paper, we implemented the fast $I_{ds}-V_{gs}$ technique to get the entire characteristic of p-MOSFET devices; as fast as possible. This technique is used within MSM protocol under NBTI conditions. We reached 10$\mu$s in measurement time; a stress-measure delay (switching time) of about a hundred of milliseconds was reached. However, strengths and weaknesses of the technique have been discussed. Furthermore, Transconductance $(\mathrm{g}_{\mathrm{m}})$, subthreshold slope $(SS)$ and mid-gap $(MG)$ methods have also been implemented and discussed. NBTI parameter i.e. $\Delta \mathrm{V}_{\mathrm{t}\mathrm{h}}, n, \gamma$ and $\mathrm{E}_{\mathrm{a}}$ are extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy $\mathrm{E}_{\mathrm{a}}$=0.039eV and a field factor $\gamma$=0.41 $MV.cm^{-1}$ for a stress time $\mathrm{t}_{\mathrm{s}}\lt $10s have been obtained. |
