Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
| Autor: | Ming-Jinn Tsai, Tien-Ko Wang, Kuei-Shu Chang-Liao, Yi-Chuen Jian, Li-Jung Liu |
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| Rok vydání: | 2013 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Metals and Alloys Surfaces and Interfaces Crystal structure Surface finish Trapping Epitaxy Flash memory Surfaces Coatings and Films Electronic Optical and Magnetic Materials Lattice (order) Materials Chemistry Optoelectronics business Quantum tunnelling Hot-carrier injection |
| Zdroj: | Thin Solid Films. 533:1-4 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2012.11.115 |
| Popis: | P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. |
| Databáze: | OpenAIRE |
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