Variable Range Hopping in Hydrogenated Amorphous Silicon-Nickel Alloys
| Autor: | Jamal Hemine, A. Sybous, Gerard Biskupski, Abdessadek Aboudihab, A. Narjis, S. Dlimi, L. Limouny, R. Abdia, Abdelhamid El Kaaouachi |
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| Rok vydání: | 2012 |
| Předmět: |
Amorphous silicon
Materials science Condensed matter physics Fermi level chemistry.chemical_element Variable-range hopping Amorphous solid Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake Nickel chemistry Electrical resistivity and conductivity symbols Density of states Condensed Matter::Strongly Correlated Electrons Metal–insulator transition |
| Zdroj: | Journal of Modern Physics. :517-520 |
| ISSN: | 2153-120X 2153-1196 |
| Popis: | On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys. |
| Databáze: | OpenAIRE |
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