Autor: |
P. Klein, W. Dünnweber, T. Beha |
Rok vydání: |
1993 |
Předmět: |
|
Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 326:386-389 |
ISSN: |
0168-9002 |
DOI: |
10.1016/0168-9002(93)90381-q |
Popis: |
Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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