Electrical Characteristics of Metal/High-k MOS Devices Using Effective Oxygen Control for Sub-1nm EOT

Autor:	Parhat Ahmet, Takeo Hattori, A.N. Chandorkar, Hiroshi Iwai, Kuniyuki Kakushima, Koichi Okamoto, Kazuo Tsutsui, Nobuyuki Sugii
Rok vydání:	2008
Předmět:	Metal Materials science chemistry business.industry visual_art visual_art.visual_art_medium Optoelectronics chemistry.chemical_element business Oxygen High-κ dielectric
Zdroj:	ECS Transactions. 16:203-212
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2981603
Popis:	In this study, we have studied the mechanism of equivalent oxide thickness (EOT) increase after annealing using oxygen diffusion model from W gate electrode. It has been revealed that proper thickness W insertion into metal/high-k interface could depress EOT increase after post metallization annealing (PMA) and achieve small CV hysteresis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7029af8e186e70e1d8d99fc137e00fbc https://doi.org/10.1149/1.2981603 Zobrazit plný text záznamu