InGaN/GaN dot-in-a-wire: ultimate terahertz nanostructure

Autor:	Yujie J. Ding, Zetian Mi, Guan Sun, Ruolin Chen, Hieu Pham Trung Nguyen
Rok vydání:	2015
Předmět:	Photoluminescence Materials science Nanostructure business.industry Terahertz radiation Quantum wire Nanowire Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optics Quantum dot Electric field Optoelectronics business
Zdroj:	Laser & Photonics Reviews. 9:105-113
ISSN:	1863-8880
DOI:	10.1002/lpor.201400138
Popis:	The terahertz (THz) radiation from InGaN/GaN dot-in-a-wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three-dimensional quantum-confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light-emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::70236530d1a3a1f0ba54bfc4d9683218 https://doi.org/10.1002/lpor.201400138 Zobrazit plný text záznamu Plný text