Characterisation of porous silicon layers by spectroscopic ellipsometry
| Autor: | Markus Thönissen, U. Rossow, H. Münder, W. Theiβ |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Silicon Physics::Instrumentation and Detectors business.industry Doping Biophysics Nanocrystalline silicon Physics::Optics chemistry.chemical_element General Chemistry Condensed Matter Physics Porous silicon Microstructure Electrochemistry Biochemistry Atomic and Molecular Physics and Optics Optics Chemical engineering chemistry business Porous medium Current density |
| Zdroj: | Journal of Luminescence. 57:205-209 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/0022-2313(93)90134-9 |
| Popis: | The influence of the microscopic structure of porous silicon layers on the dielectric function is determined by spectroscopic ellipsometry. The investigated layers were formed on high and low p-type doped substrates. Their microscopic structure was changed by varying the current density in the electrochemical formation process. The measured dielectric function was found to be extremely sensitive on the microscopic structure. New features occur in the measured dielectric function which are characteristic for the silicon skeleton in the porous silicon layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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