| Autor: |
M. Krcmar, N. Noether, Georg Boeck, F. Korndorfer, Jan Hoffmann, B. Heinemann |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
2006 International Conference on Microwaves, Radar & Wireless Communications. |
| DOI: |
10.1109/mikon.2006.4345366 |
| Popis: |
A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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