| Autor: |
P.K. Bhattacharya, A.D. Savio, G.S. Kousik, R.P. Nandakumar |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
IEE Proceedings G Circuits, Devices and Systems. 139:400 |
| ISSN: |
0956-3768 |
| Popis: |
This paper describes the dependence of the radiation-induced threshold voltage shift (δVt) of n-channel IGFET devices on the substrate doping concentration and the concentration of segregated boron atoms in the oxide. Substrate resistivities of 0.1 and 0.5 Ω/cm were used. The thicknesses of the investigated gate oxides varied from 17.0 to 50.0 nm. The devices were irradiated with Al Kα (1.49 keV) X-rays to different radiation doses at identical dose rates. The threshold voltages were measured before and after irradiation, employing an optically assisted hot electron injection technique. Following irradiation and hot electron injection, the threshold voltage shifts due to fixed positive charge (ΔVFPC) and neutral electron traps (ΔVNET) were determined. The radiation-induced threshold voltage shifts due to FPCs were greater for the 0.5 Ω/cm wafer than for the 0.1 Ω/cm wafer, and the threshold voltage shifts due to NETs were greater for the 0.1 Ω/cm substrate. The interface concentration of boron in the oxide at different depths obtained from Suprem-III simulations was related to induced threshold voltage shifts. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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