| Autor: |
S.I. Petrushenko, S. V. Dukarov, V. N. Sukhov, I. G. Churilov, Z. V. Bloshenko |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Lecture Notes in Mechanical Engineering ISBN: 9789811361326 |
| Popis: |
The work is devoted to the study of through pores that arise in binary Bi/Sn films when they are annealed near the melting point. It is shown, that the study of the temperature dependence of the average pores size can be used to measure the activation energy of diffusion processes that ensure the de-wetting of the samples under study. Concentration dependence of the activation energy of diffusion in bilayer Bi/Sn films is obtained. It is shown, that the diffusion activation energy has a minimum in the homogeneous region and is practically constant at a component concentration corresponding to the two-phase section of the phase diagram. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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