High Microwave and Noise Performance of 0.17-$muhbox m$ AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates
| Autor: | A. Minko, V. Hoel, S. Lepilliet, G. Dambrine, J.C. DeJaeger, Y. Cordier, F. Semond, F. Natali, J. Massies |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon business.industry Transconductance Transistor chemistry.chemical_element High-electron-mobility transistor Substrate (electronics) Noise (electronics) Cutoff frequency Electronic Optical and Magnetic Materials law.invention chemistry law Optoelectronics Electrical and Electronic Engineering business Microwave |
| Zdroj: | IEEE Electron Device Letters. 25:167-169 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2004.825208 |
| Popis: | AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-/spl mu/m T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10 V with an intrinsic transconductance (g/sub m/) of 215 mS/mm. A unity current gain cutoff frequency (f/sub t/) of 46 GHz and a maximum oscillation frequency (f/sub max/) of 92 GHz are measured at V/sub DS/=10 V and I/sub DS/=171 mA/mm. The radio-frequency microwave noise performance of the device is obtained at 10 GHz for different drain currents. At V/sub DS/=10 V and I/sub DS/=92 mA/mm, the device exhibits a minimum-noise figure (NF/sub min/) of 1.1 dB and an associated gain (G/sub ass/) of 12 dB. To our knowledge, these results are the best f/sub t/, f/sub max/ and microwave noise performance ever reported on GaN HEMT grown on Silicon substrate. |
| Databáze: | OpenAIRE |
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