GBIT/s Pulse Regeneration and Amplification with GaAs-Mesfets

Autor:	W. Filensky, H. Beneking
Rok vydání:	2005
Předmět:	Materials science business.industry Pulse (signal processing) Transconductance Electrical engineering Optoelectronics Ohm business Capacitance Pulse-width modulation Diode Voltage Threshold voltage
Zdroj:	MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1976.1123679
Popis:	Using GaAs-MESFETs under switching conditions, the regeneration and amplification of fast pulses in the 50ps range is performed. Sharpening factors t/sub y in/ / t /sub y out/ of 3 and voltage amplification factors of 2 at 50 ohm are reached for output pulses up to 100 mA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6fe07f181173ec22e1dcba8b33a94891 https://doi.org/10.1109/mwsym.1976.1123679 Zobrazit plný text záznamu