A novel approach for MEMS with galvanic protection on SOI wafer
| Autor: | Weilong You, Heng Yang, Wei Zhao, Jun Pang, Zhengyin Yu, Wenshan Wei |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Microelectromechanical systems
Materials science Silicon business.industry Galvanic anode chemistry.chemical_element Silicon on insulator Nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Hardware and Architecture Etching (microfabrication) Deep reactive-ion etching Optoelectronics Wafer Undercut Electrical and Electronic Engineering business |
| Zdroj: | Microsystem Technologies. 21:1959-1965 |
| ISSN: | 1432-1858 0946-7076 |
| DOI: | 10.1007/s00542-014-2312-7 |
| Popis: | A novel SOI-MEMS process with galvanic protection technique is presented in this paper. After front-end-of-line processes and metallization with Au on SOI wafers, the moving structures and release trenches are patterned by using a single mask. A combination of RIE and DRIE was employed to define the moving structures and release trenches. In the releasing process, the silicon substrate was etched normally while the exposed silicon on SOI layer was passivated by the galvanic cell that consisted of top silicon layer and Au electrode in TMAH solution. Compared with other methods, this is a simplified process. As no protection layer on the sidewalls was required for TMAH etching, all of the lithography was performed on the plain surface instead of the high topography surface. Aside from this, the released cavity has a large space that provides less air damping. The undercut of the anchor is controlled by anisotropic etching which results in desirable anchors. A double-ended tuning fork resonator was fabricated to verify the processes. The resonant frequency of the resonator was measured as 3.098 MHz with a quality factor of 730 in an atmospheric environment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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