X-ray Photoelectron Study of TiN
| Autor: | A. R. Chourasia, D. R. Chopra |
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| Rok vydání: | 1992 |
| Předmět: | |
| Zdroj: | Surface Science Spectra. 1:233-237 |
| ISSN: | 1520-8575 1055-5269 |
| DOI: | 10.1116/1.1247644 |
| Popis: | Thin films of TiN were deposited from TiCl4, NH3, and H2 in a lamp heated single wafer ‘‘warm wall’’ low pressure chemical vapor deposition reactor. The deposition was carried out on a TiSi2/Si sample. The thickness of the films is estimated to be 100 nm. The films were analyzed by x‐ray diffraction, Rutherford backscattering spectroscopy, and x‐ray photoelectron spectroscopy. The XPS data in Ti 2p, N 1s, Ti L3M23V, and Ti L3M23M23 regions are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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