Improved thermal stability of AlGaAs–GaAs quantum well heterostructures using a ‘‘blocking’’ Zn diffusion to reduce column‐III vacancies

Autor:	E. I. Chen, J. E. Baker, Nick Holonyak, Anthony D. Minervini, Michael R. Krames
Rok vydání:	1995
Předmět:	Condensed Matter::Materials Science Materials science Photoluminescence Physics and Astronomy (miscellaneous) Annealing (metallurgy) Superlattice Doping Analytical chemistry Thermal stability Heterojunction Mass spectrometry Quantum well
Zdroj:	Applied Physics Letters. 67:1859-1861
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.114356
Popis:	Data are presented on the reduction of layer intermixing (disordering) in AlGaAs–GaAs quantum well heterostructures (QWH) during high‐temperature anneals by an initial low‐temperature ‘‘blocking’’ Zn diffusion. Room‐temperature photoluminescence measurements of the increase in the lowest electron‐to‐heavy‐hole transition energy in the QW are used to characterize the extent of layer intermixing. Doped (C and Si) samples annealed (850 °C, 12 h) after a low‐temperature blocking Zn diffusion (480 °C) exhibit reductions in energy shift from ∼177 meV to as little as ∼18 meV. Similar effects are also observed, but to a lesser extent, for undoped samples. The improved thermal stability is attributed to a Zn‐diffusion induced reduction in the number of column‐III vacancies in the active layers and is confirmed by secondary‐ion mass spectroscopy measurements.
Databáze:	OpenAIRE
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