Calibration of the isolated oxygen interstitial localized vibrational mode absorption line in GaAs

Autor:	R. E. Kremer, S. T. Neild, Marek Skowronski
Rok vydání:	1991
Předmět:	Physics and Astronomy (miscellaneous) Absorption spectroscopy Oscillator strength Annealing (metallurgy) Chemistry Vacancy defect Doping Solid oxygen Analytical chemistry chemistry.chemical_element Oxygen Spectral line
Zdroj:	Applied Physics Letters. 58:1545-1547
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105173
Popis:	A series of isochronal annealing experiments have been performed on bulk GaAs crystals doped with oxygen. Two centers induced by oxygen, the isolated oxygen interstitial (Oi) and the gallium‐oxygen‐gallium (Ga‐O‐Ga) defect, most likely due to oxygen interstitial‐arsenic vacancy complex, were monitored using localized vibrational mode absorption. The Ga‐O‐Ga center dissociates at temperatures above 650 °C resulting in an increase of the Oi concentration. Using the known oscillator strength of Ga‐O‐Ga transition, the calibration factor between integrated absorption and concentration of isolated oxygen interstitial was determined to be 8×1016 cm−1. The observed increase of absorption bands of both defects after high‐temperature annealing indicates that other types of oxygen‐containing defects are present.
Databáze:	OpenAIRE
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