Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors
| Autor: | Taek Ahn, Sungho Choi, Byung-Yoon Park |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Doping Biomedical Engineering Oxide Bioengineering Insulator (electricity) General Chemistry Dielectric Condensed Matter Physics Microstructure chemistry.chemical_compound chemistry Thin-film transistor Optoelectronics General Materials Science Thin film business Sol-gel |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 21:4694-4699 |
| ISSN: | 1533-4880 |
| Popis: | The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage |
| Databáze: | OpenAIRE |
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