Structural and Electrical Properties of ([SnSe]1+δ)m(NbSe2)1 Compounds: Single NbSe2 Layers Separated by Increasing Thickness of SnSe
| Autor: | Matti B. Alemayehu, Matthias Falmbigl, Corinna Grosse, Richard D. Westover, Sage R. Bauers, David W. Johnson, Kim Ta, Saskia F. Fischer |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Chemistry of Materials. 27:867-875 |
| ISSN: | 1520-5002 0897-4756 |
| Popis: | The compounds ([SnSe]1+δ)m(NbSe2)1, where 1 ≤ m ≤ 10, were prepared from a series of designed precursors. The c-axis lattice parameter systematically increases by 0.577(5) nm as the value of m is increased, which indicates that an additional bilayer of rock salt structured SnSe is inserted for each unit of m. The in-plane structure of both constituents systematically changes as the thickness of SnSe increases. Both X-ray diffraction and electron microscopy studies show the presence of turbostratic disorder between the different constituent layers. The electrical resistivity and Hall coefficient increase systematically as a function of m stronger than would be expected for noninteracting metallic NbSe2 and semiconducting SnSe layers, suggesting the presence of charge transfer between the layers. The temperature dependence of the resistivity changes from metallic behavior for m 3 show an upturn in the resistivity below 50 K... |
| Databáze: | OpenAIRE |
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