Lateral growth of highly oriented graphite by chemical vapor deposition upon Pt film formed on sapphire

Autor:	Yoshimasa Ohki, Masako Yudasaka, Rie Kikuchi, Susumu Yoshimura, Etsuro Ota, T. Matsui
Rok vydání:	1996
Předmět:	Diffraction Yield (engineering) Highly oriented pyrolytic graphite Chemistry Analytical chemistry Sapphire Mineralogy Chemical vapor deposition Graphite Condensed Matter Physics Rocking curve Electronic Optical and Magnetic Materials Auger
Zdroj:	Physica Status Solidi (a). 156:107-112
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2211560114
Popis:	Islands of highly oriented graphite were grown by chemical vapor deposition at 900 °C upon a Pt film with initial thickness 50 nm formed on sapphire. The value of mosaic spread estimated from a rocking curve for graphite (002) X-ray diffraction was 0.27° which is smaller than that of highly oriented pyrolytic graphite. Depth profiles of elements measured by Auger analyses indicated that dips appeared during chemical vapor deposition in the originally flat Pt film. The depth profiles also indicated that the graphite islands grew within the dips in the Pt film. It was found that the surface planes (110) and (001) of sapphire yield a better aligned graphite than (012).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6fac66b632410cb75839da8211474fbc https://doi.org/10.1002/pssa.2211560114 Zobrazit plný text záznamu Plný text