Preparation of V[sub 2]O[sub 3] Thin Films by the Reduction of VO[sub 2] in a Very Low Pressure

Autor:	Jung Wook Lim, Jong-Su Noh, Hyun-Tak Kim, Sun Jin Yun, Byung-Gyu Chae
Rok vydání:	2008
Předmět:	Materials science Annealing (metallurgy) General Chemical Engineering Electrochemistry Analytical chemistry General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film
Zdroj:	Electrochemical and Solid-State Letters. 11:H173
ISSN:	1099-0062
Popis:	V 2 O 3 films fabricated on (1010) or (1012) Al 2 O 3 substrates in a sol-gel process and subsequent annealing in a very low pressure exhibited an abrupt and large metal-insulator transition (MIT) near -104°C on heating. In this study, VO 2 films initially formed by a sol-gel process were effectively reduced to V 2 O 3 at an annealing temperature of ≥550°C in a vacuum without reducing gases. The V 2 O 3 films exhibited resistance changes as large as 2 X 10 4 -2 X 10 5 due to MIT with annealing temperatures ranging from 550 to 650°C, which are much lower than the process temperature reported in earlier studies.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6fa04af2ea2c9d1f0763ed64d6d5f1e2 https://doi.org/10.1149/1.2909475 Zobrazit plný text záznamu