The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals
| Autor: | F. Yu. Solomkin, E. V. Rakova, Sergei V. Novikov, Andrey S. Orekhov, L. V. Bochkov, Vera V. Klechkovskaya, G. N. Isachenko |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Dopant Manganese silicide Metallurgy Doping chemistry.chemical_element Germanium 02 engineering and technology Manganese 021001 nanoscience & nanotechnology 010403 inorganic & nuclear chemistry Condensed Matter Physics Microstructure 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials chemistry Chemical engineering Thermoelectric effect 0210 nano-technology |
| Zdroj: | Semiconductors. 51:887-890 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The reason why manganese monosilicide inclusions are formed during the growth of higher manganese silicide (HMS) crystals has not been studied in detail so far. Changes in the amount and density of these inclusions are greatly influenced by dopants. In this study, the structure of HMS crystals with various contents of germanium as a doping element is examined. It is found that raising the germanium content to 1 at % results in the fragmentation of layered manganese monosilicide inclusions and, simultaneously, leads to significant changes in the thermoelectric properties of HMS crystals. The results of the microstructural analysis of HMS crystals in relation to the germanium concentration may be of use for understanding the mechanism by which the manganese monosilicide phase is formed during the growth of higher manganese silicide crystals. |
| Databáze: | OpenAIRE |
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