Composition and structure of ion-bombardment-induced growth cones on InP
| Autor: | W. H. Gries, H. Lakner, J. B. Malherbe |
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| Rok vydání: | 1991 |
| Předmět: |
Diffraction
Argon Ion beam Physics::Instrumentation and Detectors chemistry.chemical_element Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Molecular physics Surfaces Coatings and Films Amorphous solid Condensed Matter::Materials Science Crystallography chemistry Electron diffraction Scanning transmission electron microscopy Materials Chemistry Irradiation |
| Zdroj: | Surface and Interface Analysis. 17:719-725 |
| ISSN: | 1096-9918 0142-2421 |
| DOI: | 10.1002/sia.740171006 |
| Popis: | The previously reported1,2 effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth ‘cones’ induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 × 1015 to 2 × 1017 cm−2. |
| Databáze: | OpenAIRE |
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