Thermal reaction of polycrystalline SiC with XeF2
| Autor: | Kyoichi Sawabe, Takashi Iida, Yukimasa Mori, Kosuke Shobatake, Eri Maeta, Shunsuke Koide, Hiroaki Sakai, Morimichi Watanabe |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Auger effect
Scanning electron microscope Xenon difluoride Analytical chemistry Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound symbols.namesake chemistry X-ray photoelectron spectroscopy symbols Silicon carbide Crystallite Thermal analysis Molecular beam |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1638-1646 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.2110387 |
| Popis: | Studies on the thermal reaction behavior of polycrystalline cubic silicon carbide (SiC) with effusive xenon difluoride (XeF2) have been carried out over the sample temperature (Ts) range from 300to900K using molecular beam quadrupole mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., x-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above Ts=700K, the reaction product desorbed from the SiC surface was identified as SiF4. The flux intensity of SiF4 increases monotonically as a function of Ts above 700K. The flux intensity of XeF2 desorbed from the SiC surface decreases above Ts=700K, and at Ts=900K, approximately 10% of the incident XeF2 was found to be consumed by the thermal reaction. No ions at m∕e=31 (CF+), 50 (CF2+), and 69 (CF3+) to be ascribed to carbon fluoride species were detected under the present experimental conditions, and thus C atoms in SiC were found to remain as residue. From the XPS and SAM observations of the SiC samp... |
| Databáze: | OpenAIRE |
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