Comparative analysis of 350nm CMOS Active Pixel Sensor electronics

Autor:	Lidiane Cristina Machado Costa, Luciana P. Salles, Davies William de Lima Monteiro, Artur S. B. de Mello
Rok vydání:	2015
Předmět:	CMOS sensor CMOS Cmos active pixel sensor Computer science business.industry Logic gate Silicon photodiode Electrical engineering Semiconductor device modeling Electronics business Electronic circuit
Zdroj:	2015 30th Symposium on Microelectronics Technology and Devices (SBMicro).
DOI:	10.1109/sbmicro.2015.7298138
Popis:	This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6f87a40ef63a8f6314317229d413a28c https://doi.org/10.1109/sbmicro.2015.7298138 Zobrazit plný text záznamu